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2N2369A Datasheet SILICON NPN TRANSISTOR

Manufacturer: Central Semiconductor

General Description

: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications.

MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 40 40 15 4.5 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=20V ICBO VCB=20V, TA=150°C BVCBO IC=10μA 40 BVCES IC=10μA 40 BVCEO IC=10mA 15 BVEBO IE=10μA 4.5 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=10mA, IB=1.0mA, TA=125°C VCE(SAT) IC=30mA, IB=3.0mA VCE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=10mA, IB=1.0mA 700 VBE(SAT) IC=30mA, IB=3.0mA VBE(SAT) IC=100mA, IB=10mA hFE VCE=1.0V, IC=10mA 40 hFE VCE=0.35V, IC=10mA, TA=–55°C 20 hFE VCE=0.4V, IC=30mA 30 hFE VCE=1.0V, IC=100mA 20 MAX 400 30 200 300 250 500 850 1.15 1.6 120 UNITS V V V V mA mA mW W °C °C/W °C/W UNITS nA μA V V V V mV mV mV mV mV V V R1 (23-June 2014) 2N2369A SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 500 Cob VCB=5.0V, IE=0, f=140kHz 4.0 ton VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 toff VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ts VCC=10V, IC=10mA, IB1=IB2=10mA 13 TO-18 CASE - MECHANICAL OUTLINE UNITS MHz pF ns ns ns LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w.

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Overview

2N2369A SILICON NPN TRANSISTOR w w w.

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