2N2895
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N2895, 2N2896, and 2N2897 are silicon NPN epitaxial planar transistors designed for small signal, general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
2N2895 120
2N2896 140 140 90 7.0 1.0 500 1.8
-65 to +200
2N2897 60
UNITS V V V V A m W W °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2896
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICBO
VCB=60V
- 2.0
- 10
ICBO
VCB=60V,...
