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2N3019 - NPN Transistor

General Description

The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications.

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Other Datasheets by Central Semiconductor

Part Number Description
2N3011 SILICON NPN TRANSISTOR
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2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7.0 1.0 0.8 5.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150°C - 10 IEBO VEB=5.0V - 10 BVCBO IC=100μA 140 - BVCEO IC=30mA 80 - BVEBO IE=100μA 7.