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2N6212 Datasheet SILICON PNP POWER TRANSISTORS

Manufacturer: Central Semiconductor

Download the 2N6212 datasheet PDF. This datasheet also includes the 2N6211 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N6211-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon PNP transistors designed for high speed switching and high voltage amplifier applications.

MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6211 275 225 2N6212 350 300 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N6213 400 350 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6211 2N6212 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=250V, VBE=1.5V - 0.5 -- ICEV VCE=315V, VBE=1.5V -- - 0.5 ICEV VCE=360V, VBE=1.5V -- -- ICEV VCE=250V, VBE=1.5V, TC=100°C - 5.0 -- ICEV

Overview

2N6211 2N6212 2N6213 SILICON PNP POWER TRANSISTORS w w w.

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