2N6212 datasheet by Inchange Semiconductor.
| Part number | 2N6212 |
|---|---|
| Datasheet | 2N6212-INCHANGE.pdf |
| File Size | 183.32 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6212 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -0.5mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6212 | SILICON PNP POWER TRANSISTORS | Central Semiconductor |
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2N6212 | Power Transistors | RCA |
 |
2N6212 | PNP High Power Transistor | VPT |
 |
2N6212 | PNP HIGH POWER SILICON TRANSISTOR | Microsemi |
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