With TO-3 packaging
Very high DC current gain
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Electronic ignition
Alternator regulator
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6212
DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO VCEO VEBO
IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
-350 -300
-6 -2
ICM
Collector Current-Peak
-5
IB
Collector Current-Continuous
-1
PC
Collector Power Dissipation @ TC=25℃
35
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTI
2N6212 Datasheet
