The 2N6212 is a SILICON PNP POWER TRANSISTORS. Download the datasheet PDF and view key features and specifications below.
| Part Number | 2N6212 |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon PNP transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXI. . |
| Part Number | 2N6212 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and . emiconductor 2N6212 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -0.5mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1. |
| Part Number | 2N6212 |
|---|---|
| Description | PNP High Power Transistor |
| Manufacturer | VPT Components |
| Overview |
2N6211, 2N6212, 2N6213, 2N6213A
PNP High Power Transistor
Rev. V1
Features
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/461 • Designed for High Speed Switching and High Voltage Ampl.
* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/461 * Designed for High Speed Switching and High Voltage Amplifier Applications * Available in TO-66 package Electrical Characteristics ( TC = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collecto. |
| Part Number | 2N6212 |
|---|---|
| Description | PNP HIGH POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N62. C = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω 2N6211 2N6212 V(BR)CER 2N6213 Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω, VBE = -1.5 Vdc 2N6211 V(BR)CEX 2N6212 2N6213 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Min. 225 3. |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6212 | RCA | Power Transistors |
