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2N6212 - PNP HIGH POWER SILICON TRANSISTOR

Download the 2N6212 datasheet PDF. This datasheet also covers the 2N6211 variant, as both devices belong to the same pnp high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6211-Microsemi.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage VCEO 225 300 350 Vdc Collector-Base Voltage VCBO 275 350 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current Total Power Dissipation IC @ TA = +250C (1) @ TC = +250C (2) PT 2.0 Adc 3.0 W 35 W Operating & Storage Temperature Top, Tstg -55 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 17.1 mW/0C for TA > +250C 2) Derate linearly 200 mW/0C for TC > +250C 5.