2N6211 - PNP HIGH POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N6211
Manufacturer	Microsemi (now Microchip Technology)
File Size	48.20 KB
Description	PNP HIGH POWER SILICON TRANSISTOR
Datasheet	2N6211 Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N6212	PNP HIGH POWER SILICON TRANSISTOR
2N6213	PNP HIGH POWER SILICON TRANSISTOR
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2N6249	NPN POWER SILICON TRANSISTOR
2N6250	NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage VCEO 225 300 350 Vdc Collector-Base Voltage VCBO 275 350 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current Total Power Dissipation IC @ TA = +250C (1) @ TC = +250C (2) PT 2.0 Adc 3.0 W 35 W Operating & Storage Temperature Top, Tstg -55 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 17.1 mW/0C for TA > +250C 2) Derate linearly 200 mW/0C for TC > +250C 5.