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2N6216 - NPN Transistor

General Description

With TO-3 package Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

performance and reliable operation.

Designed for linear power and switching amplifier application

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 200 V 150 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=100℃ 71 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.46 ℃/W 2N6216 isc website：www.iscsemi.