Datasheet Details
| Part number | 2N6211 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6211-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6211.
| Part number | 2N6211 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6211-InchangeSemiconductor.pdf |
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·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -225V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -275 -225 -6 -2 ICM Collector Current-Peak -5 IB Collector Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 35 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6211 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6211 | SILICON PNP POWER TRANSISTORS | Central Semiconductor |
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2N6211 | PNP High Power Transistor | VPT |
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2N6211 | PNP HIGH POWER SILICON TRANSISTOR | Microsemi |
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