Datasheet Details
| Part number | BCY79 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 301.74 KB |
| Description | SILICON PNP TRANSISTORS |
| Download | BCY79 Download (PDF) |
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Download the BCY79 datasheet PDF. This datasheet also includes the BCY78 variant, as both parts are published together in a single manufacturer document.
| Part number | BCY79 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 301.74 KB |
| Description | SILICON PNP TRANSISTORS |
| Download | BCY79 Download (PDF) |
|
|
|
: The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg JA JC BCY78 32 BCY79 45 32 45 5.0 100 200 200 340 1.0 -65 to +200 450 150 UNITS V V V mA mA mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TA=150°C IEBO VEB=5.0V BVCBO IC=10μA (BCY78) 32 BVCBO IC=10μA (BCY79) 45 BVCEO IC=2.0mA (BCY78) 32 BVCEO IC=2.0mA (BCY79) 45 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=10mA, IB=250μA VCE(SAT) IC=100mA, IB=2.5mA VBE(SAT) IC=10mA, IB=250μA 0.60 VBE(SAT) IC=100mA, IB=2.5mA 0.70 VBE(ON) VCE=5.0V, IC=2.0mA 0.60 MAX 15 10 20 0.25 0.80 0.85 1.20 0.75 BCY78-VII BCY78-VIII BCY78-IX BCY79-VII BCY79-VIII BCY79-IX MIN TYP MAX MIN MAX MIN MAX hFE VCE=5.0V, IC=10μA - 140 - 30 - 40 - hFE VCE=5.0V, IC=2.0mA 120 - 220 180 310 250 460 hFE VCE=1.0V, IC=10mA 80 - - 120 400 160 630 hFE VCE=1.0V, IC=100mA 40 - - 45 - 60 - UNITS nA μA nA V V V V V V V V V V BCY78-X BCY79-X MIN MAX 100 380 630 240 1000 60 - R4 (4-June 2013) BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN fT VCE=5.0V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC
BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BCY79 | TRANSISTOR | Motorola |
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BCY79 | PNP switching transistors | NXP |
 |
BCY79 | PNP SILICON PLANAR TRANSISTORS | Siemens Semiconductor Group |
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BCY79 | PNP SILICON PLANAR TRANSISTORS | CDIL |
 |
BCY79 | (BCY78 / BCY79) SILICON PLANAR EPITAXIAL TRANSISTORS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| BCY79-IX | SILICON PNP TRANSISTORS |
| BCY79-VII | SILICON PNP TRANSISTORS |
| BCY79-VIII | SILICON PNP TRANSISTORS |
| BCY79-X | SILICON PNP TRANSISTORS |
| BCY78 | SILICON PNP TRANSISTORS |
| BCY78-IX | SILICON PNP TRANSISTORS |
| BCY78-VII | SILICON PNP TRANSISTORS |
| BCY78-VIII | SILICON PNP TRANSISTORS |
| BCY78-X | SILICON PNP TRANSISTORS |
| BCY30 | PNP Silicon Transistor |