CDM3-800 Datasheet | Central Semiconductor

CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT DPAK CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM3-800 is a 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET bines high voltage capability with low r DS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING: FULL PART NUMBER APPLICATIONS: - Power Factor Correction - Alternative energy inverters - Solid State Lighting (SSL) Features : - High voltage capability (VDS=800V) - Low gate charge (Qg(tot)=11.3n C TYP) - Low r DS(ON) (3.8Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Continuous Source Current (Body Diode) Maximum Pulsed Source Current (Body Diode) Single Pulse Avalanche Energy (Note 1) Power Dissipation Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC Thermal Resistance JA Note 1: L=30m H, IAS=3.15A, VDD=100V, RG=25Ω, Initial...