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CJD31C Datasheet NPN Power Transistors

Manufacturer: Central Semiconductor

Overview: CJD31C NPN CJD32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications.

MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 3.0 A Peak Collector Current ICM 5.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 15 W Power Dissipation (TA=25°C) PD 1.56 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 8.33 °C/W Thermal Resistance ΘJA 80.1 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICEO VCE=60V 50 UNITS µA ICES VCE=100V 20 µA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA 100 V VCE(SAT) IC=3.0A, IB=375mA 1.2 V VBE(ON) VCE=4.0V, IC=3.0A 1.8 V hFE VCE=4.0V, IC=1.0A 25 hFE VCE=4.0V, IC=3.0A 10 50 fT VCE=10V, IC=500mA, f=1.0MHz 3.0 MHz hfe VCE=10V, IC=500mA, f=1.0kHz 20 R5 (22-August 2023) CJD31C NPN CJD32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE                LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w.

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