The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CJD200 NPN CJD210 PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
8.0
V
Continuous Collector Current
IC
5.0
A
Peak Collector Current
ICM
10
A
Continuous Base Current
IB
1.0
A
Power Dissipation
PD
12.5
W
Power Dissipation (TA=25°C)
PD
1.
CJD200 Datasheet
