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CJD31C NPN CJD32C PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
3.0
A
Peak Collector Current
ICM
5.0
A
Continuous Base Current
IB
1.0
A
Power Dissipation
PD
15
W
Power Dissipation (TA=25°C)
PD
1.
CJD31C Datasheet
