Datasheet4U Logo Datasheet4U.com

CJD31C - NPN POWER TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CJD3055 COMPLEMENTARY SILICON POWER TRANSISTOR Central Semiconductor Corp
CJD30N10 N-Channel Power MOSFET JCET
CJD340 SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS Central Semiconductor Corp
CJD3439 NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS CDIL
CJD01N60 N-Channel Power MOSFET ZPSEMI

Other Datasheets by Central Semiconductor

Part Number Description
CJD32C PNP POWER TRANSISTORS
CJD350 SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS
CJD122 POWER DARLINGTON TRANSISTORS
CJD127 POWER DARLINGTON TRANSISTORS
CJD200 NPN POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CJD31C NPN CJD32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 3.0 A Peak Collector Current ICM 5.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 15 W Power Dissipation (TA=25°C) PD 1.