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CJD32C - PNP POWER TRANSISTORS

This page provides the datasheet information for the CJD32C, a member of the CJD31C PNP POWER TRANSISTORS family.

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications.

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Datasheet preview – CJD32C

Datasheet Details

Part number CJD32C
Manufacturer Central Semiconductor
File Size 663.81 KB
Description PNP POWER TRANSISTORS
Datasheet download datasheet CJD32C Datasheet
Additional preview pages of the CJD32C datasheet.

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CJD31C NPN CJD32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 3.0 A Peak Collector Current ICM 5.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 15 W Power Dissipation (TA=25°C) PD 1.
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