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CJD32C - PNP POWER TRANSISTORS

Download the CJD32C datasheet PDF. This datasheet also covers the CJD31C variant, as both devices belong to the same pnp power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications.

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Note: The manufacturer provides a single datasheet file (CJD31C-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CJD31C NPN CJD32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 3.0 A Peak Collector Current ICM 5.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 15 W Power Dissipation (TA=25°C) PD 1.