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Central Semiconductor

CMLT2207 Datasheet Preview

CMLT2207 Datasheet

COMPLEMENTARY SILICON TRANSISTORS

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CMLT2207
SURFACE MOUNT
PICOminiTM
DUAL,COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
VCBO
VCEO
VEBO
IC
PD
Junction Temperature
Thermal Resistance
TJ,Tstg
ΘJA
CentralTM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLT2207
consists of one 2N2222A NPN silicon transistor
and one individual isolated complementary
2N2907A PNP silicon transistor, manufactured
by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package.
This PICOmini™ device has been designed for
small signal general purpose amplifier and
switching applications.
MARKING CODE: L70
NPN (Q1)
75
40
6.0
600
350
PNP (Q2)
60
60
5.0
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB(OFF)=3.0V
VCE=30V, VEB(OFF)=500mV
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
NPN (Q1)
MIN MAX
- 10
--
- 10
--
- 10
- 10
--
75 -
40 -
6.0 -
- 0.3
- 1.0
0.6 1.2
- 2.0
35 -
50 -
75 -
100 300
50 -
40 -
PNP (Q2)
MIN MAX
--
- 10
--
- 10
--
--
- 50
60 -
60 -
5.0 -
- 0.4
- 1.6
- 1.3
- 2.6
75 -
100 -
100 -
100 300
--
50 -
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
R1 (13-November 2002)
Free Datasheet http://www.datasheet4u.com/




Central Semiconductor

CMLT2207 Datasheet Preview

CMLT2207 Datasheet

COMPLEMENTARY SILICON TRANSISTORS

No Preview Available !

CMLT2207
CentralTM
Semiconductor Corp.
SURFACE MOUNT
PICOminiTM
DUAL,COMPLEMENTARY
SILICON TRANSISTORS
SYMBOL
fT
fT
Cob
Cib
Cib
hie
hie
hre
hre
hfe
hfe
hoe
hoe
rb'Cc
NF
ton
td
tr
toff
ts
ts
tf
tf
TEST CONDITIONS
VCE=20V, IC=20mA, f=100MHz
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCB=10V, IE=20mA, f=31.8MHz
VCE=10V, IC=100µA, RS=1.0k, f=1.0kHz
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
NPN (Q1)
MIN MAX
300 -
--
- 8.0
- 25
--
2.0 8.0
0.25 1.25
- 8.0
- 4.0
50 300
75 375
5.0 35
25 200
150
- 4.0
--
- 10
- 25
--
- 225
--
- 60
--
PNP (Q2)
MIN MAX
--
200 -
- 8.0
-
- 30
--
--
--
--
--
--
--
--
--
-
- 45
- 10
- 40
- 100
--
- 80
--
- 30
UNITS
MHz
MHz
pF
pF
pF
k
k
x10-4
x10-4
µmhos
µmhos
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
D
A
B
EE
654
GF
12 3
CH
R0
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: L70
R1 (13-November 2002)
Free Datasheet http://www.datasheet4u.com/


Part Number CMLT2207
Description COMPLEMENTARY SILICON TRANSISTORS
Maker Central Semiconductor
Total Page 2 Pages
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