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CMLT4413 Datasheet COMPLEMENTARY TRANSISTOR

Manufacturer: Central Semiconductor

General Description

: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package.

This device is designed for small signal general purpose amplifier and switching applications.

SOT-563 CASE MARKING CODE: PC3 • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA NPN (Q1) PNP (Q2) 60 40 40 40 6.0 5.0 600 350 300 150 -65 to +150 357 UNITS V V V mA mW mW mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN (Q1) SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=35V, VEB=0.4V - 0.1 IBEV VCE=35V, VEB=0.4V - 0.1 BVCBO IC=100μA 60 - BVCEO IC=1.0mA 40 - BVEBO IE=100μA 6.0 - VCE(SAT) IC=150mA, IB=15mA - 0.40 VCE(SAT) IC=500mA, IB=50mA - 0.75 VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA 0.75 0.95 - 1.2 hFE VCE=1.0V, IC=0.1mA 20 - hFE VCE=1.0V, IC=1.0mA 40 - hFE VCE=1.0V, IC=10mA 80 - hFE VCE=1.0V, IC=150mA 100 300 hFE VCE=2.0V, IC=150mA -- hFE VCE=2.0V, IC=500mA 40 - fT VCE=10V, IC=20mA, f=100MHz 250 - Cob VCB=5.0V, IE=0, f=1.0MHz - 6.5 Cib VBE=0.5V, IC=0, f=1.0MHz - 30 PNP (Q2) MIN MAX - 0.1 - 0.1 40 40 5.0 - 0.40 - 0.75 0.75 0.95 - 1.3 30 60 100 -100 300 20 200 - 8.5 - 30 UNITS μA μA V V V V V V V MHz pF pF Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R3 (29-June 2015)

Overview

CMLT4413 SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR w w w.

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