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CMPDM7120G - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Description

The CENTRAL SEMICONDUCTOR CMPDM7120G is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers low rDS(ON) and low threshold voltage.

Features

  • ESD protection up to 2kV.
  • Low rDS(ON) (0.25Ω MAX @ VGS=1.5V).
  • High current (ID=1.0A).
  • Logic level compatibility.
  • Small SOT-23 package SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA UNITS V V A A mW °C °C/W 20 8.0 1.0 4.0 350 -65 to +150 357.

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Datasheet preview – CMPDM7120G

Datasheet Details

Part number CMPDM7120G
Manufacturer Central Semiconductor
File Size 348.75 KB
Description SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet download datasheet CMPDM7120G Datasheet
Additional preview pages of the CMPDM7120G datasheet.

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Full PDF Text Transcription

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CMPDM7120G SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7120G is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.
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