Full PDF Text Transcription for CP753V (Reference)
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CP753V. For precise diagrams, and layout, please refer to the original PDF.
PROCESS Small Signal Transistors CP753V PNP - High Current Transistor Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitte...
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SS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter 1 Bonding Pad Area Emitter 2 Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 66 x 66 MILS 7.1 MILS 7.9 x 7.9 MILS 7.9 x 9.5 MILS 7.9 x 9.5 MILS Al-Si - 30,000Å Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 3,878 PRINCIPAL DEVICE TYPES CZT953 R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP753V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i .
CP753V Datasheet
