Click to expand full text
PROCESS
Small Signal MOSFET
CP759R
P-Channel Enhancement-Mode MOSFET Chip
www.DataSheet4U.com
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 9.1 x 9.1 MILS 3.9 MILS 2.5 MILS DIAMETER 3.9 x 3.9 MILS Al-Si - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 290,000 PRINCIPAL DEVICE TYPE CMRDM7590
R0 (13-May 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP759R
Typical Electrical Characteristics
R0 (13-May 2010)
w w w. c e n t r a l s e m i .