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PROCESS
Small Signal Transistors
CP753V
PNP - High Current Transistor Chip
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PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter 1 Bonding Pad Area Emitter 2 Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 66 x 66 MILS 7.1 MILS 7.9 x 7.9 MILS 7.9 x 9.5 MILS 7.9 x 9.5 MILS Al-Si - 30,000Å Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 3,878 PRINCIPAL DEVICE TYPES CZT953
R2 (22-March 2010)
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PROCESS
CP753V
Typical Electrical Characteristics
R2 (22-March 2010)
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CP753V Datasheet
