CTLDM8120-M832D Key Features
- ESD protection up to 2kV
- Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)
- High current (ID=0.95A)
- Logic level patibility
- MECHANICAL OUTLINE
- Part: CTLDM8120-M832D
- Manufacturer: Central Semiconductor (official site)
- Size: 764.41 KB
Related Central Semiconductor Datasheets
| Part Number | Description |
|---|---|
| CTLDM8002A-M621 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM303N-M832DS | SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM7590 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLHR10-06 | SILICON HYPERFAST RECOVERY RECTIFIER |
| CTLM1034-M832D | SURFACE MOUNT SILICON NPN TRANSISTOR AND SCHOTTKY RECTIFIER |
CTLDM8120-M832D Description
The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. CFVS TLM832DS CASE APPLICATIONS:.