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CTLDM7590 - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

General Description

The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers.

This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.

Key Features

  • ESD protection up to 2kV.
  • Power dissipation: 125mW.
  • Low rDS(ON).
  • Low threshold voltage.
  • Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTLDM7590 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE: 2 TLM3D6D8 CASE APPLICATIONS: • Load/Power Switches • Boost/Buck Converters • Battery Charging/Power Management FEATURES: • ESD protection up to 2kV • Power dissipation: 125mW • Low rDS(ON) • Low threshold voltage • Ultra small, ultra low profile 0.6mm x 0.8mm x 0.