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CTLDM8120-M832D - SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

General Description

The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers Low rDS(ON) and Low Threshold Voltage.

Key Features

  • ESD protection up to 2kV.
  • Low rDS(ON) (0.24Ω MAX @ VGS=1.8V).
  • High current (ID=0.95A).
  • Logic level compatibility.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTLDM8120-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CFVS TLM832DS CASE APPLICATIONS: • Switching Circuits • DC-DC Converters • Battery powered portable devices FEATURES: • ESD protection up to 2kV • Low rDS(ON) (0.24Ω MAX @ VGS=1.8V) • High current (ID=0.95A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t<5.