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CTLDM303N-M832DS - SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

General Description

The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications.

This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.

Key Features

  • Low rDS(ON) (0.078Ω MAX @ VGS=2.5V).
  • High current (ID=3.6A).
  • Low gate charge.

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CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE MARKING CODE: C330 APPLICATIONS: • DC-DC converters • Drive circuits • Power management FEATURES: • Low rDS(ON) (0.078Ω MAX @ VGS=2.5V) • High current (ID=3.