CTLDM303N-M832DS Overview
The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE MARKING CODE:.
CTLDM303N-M832DS Key Features
- Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
- High current (ID=3.6A)
- Low gate charge
- MECHANICAL OUTLINE