CTLDM303N-M832DS - SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Product Overview

Central Semiconductor

Datasheet Details

Part number	CTLDM303N-M832DS
Manufacturer	Central Semiconductor
File Size	300.79 KB
Description	SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet	CTLDM303N-M832DS Datasheet
Additional preview pages of the CTLDM303N-M832DS datasheet.

Product details

Description

The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications.

This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.

Features

Low rDS(ON) (0.078Ω MAX @ VGS=2.5V).
High current (ID=3.6A).
Low gate charge.

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Published: Mar 14, 2016 |