Datasheet Details
| Part number | CZT3150 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 299.67 KB |
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Datasheet | CZT3150-CentralSemiconductor.pdf |
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Overview: CZT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR SOT-223 CASE w w w. c e n t r a l s e m i .
| Part number | CZT3150 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 299.67 KB |
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Datasheet | CZT3150-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR CZT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications.
MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJA 50 25 7.0 5.0 1.0 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob VCB=50V VEB=7.0V IC=10mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA VCE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A VCE=6.0V, IC=50mA, f=200MHz VCB=10V, IE=0, f=1.0MHz 25 250 150 50 150 MAX 1.0 1.0 0.5 0.6 1.10 1.40 550 50 UNITS V V V A A W °C °C/W UNITS µA µA V V V V V MHz pF R6 (1-March 2010) CZT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
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