CZT122 Datasheet | Central Semiconductor

CZT122 NPN CZT127 PNP SURFACE MOUNT SILICON PLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 devices are plementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA 100 100 5.0 5.0 8.0 120 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEO VCE=50V ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30m A VCE(SAT) IC=3.0A, IB=12m A VCE(SAT) IC=5.0A, IB=20m A VBE(ON) VCE=3.0V, IC=3.0A h FE VCE=3.0V, IC=500m A 1000 h FE VCE=3.0V, IC=3.0A 1000 f T VCE=4.0V, IC=3.0A, f=1.0MHz Cob VCB=10V, IE=0, f=1.0MHz...