MJE13009 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silicon NPN transistors designed for high voltage, high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCEV VEBO IC ICM IB PD TJ, Tstg ΘJC MJE13008 MJE13009 300 400 600 700 9.0 12 24 6.0 100 -65 to +150 1.25 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEV VCE=Rated VCEV, VBE(OFF)=1.5V ICEV VCE=Rated VCEV, VBE(OFF)=1.5V, TC=100°C IEBO VEB=9.0V BVCEO IC=10m A (MJE13008) BVCEO IC=10m A (MJE13009) VCE(SAT) IC=5.0A, IB=1.0A VCE(SAT) IC=8.0A, IB=1.6A VCE(SAT) IC=12A, IB=3.0A VBE(SAT)...