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Central Semiconductor Corp

2N6372 Datasheet Preview

2N6372 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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2N5954 2N5955 2N5956 PNP
2N6372 2N6373 2N6374 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372
series devices are complementary silicon power
transistors manufactured by the epitaxial base process,
mounted in a hermetically sealed metal case designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEV
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
2N5954
2N6372
90
90
85
80
2N5955
2N6373
70
70
65
60
5.0
6.0
2.0
40
-65 to +200
4.3
2N5956
2N6374
50
50
45
40
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5954
2N5955
2N6372
2N6373
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω
- 100
--
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω
--
- 100
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω
--
--
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C - 2.0
--
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C - -
- 2.0
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C - -
--
ICER
VCE=75V
- 100
--
ICER
VCE=55V
--
- 100
ICER
VCE=35V
--
--
ICEO
VCE=65V
- 1.0
--
ICEO
VCE=45V
--
- 1.0
ICEO
VCE=25V
--
--
IEBO
VBE=5.0V
- 0.1
- 0.1
BVCEV IC=100mA, VBE=1.5V, RBE=100Ω
90 -
70 -
BVCER IC=100mA, RBE=100Ω
85 -
65 -
BVCEO IC=100mA
80 -
60 -
2N5956
2N6374
MIN MAX
--
--
- 100
--
--
- 2.0
--
--
- 100
--
--
- 1.0
- 0.1
50 -
45 -
40 -
UNITS
V
V
V
V
V
A
A
W
°C
°C/W
UNITS
μA
μA
μA
mA
mA
mA
μA
μA
μA
mA
mA
mA
mA
V
V
V
R2 (2-September 2014)




Central Semiconductor Corp

2N6372 Datasheet Preview

2N6372 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N5954 2N5955 2N5956 PNP
2N6372 2N6373 2N6374 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5954
2N5955
2N6372
2N6373
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
VCE(SAT) IC=2.0A, IB=200mA
- 1.0
--
VCE(SAT) IC=2.5A, IB=250mA
--
- 1.0
VCE(SAT) IC=3.0A, IB=300mA
--
--
VCE(SAT) IC=6.0A, IB=1.2A (PNP types)
- 2.0
- 2.0
VBE(ON) VCE=4.0V, IC=2.0A
- 2.0
--
VBE(ON) VCE=4.0V, IC=2.5A
--
- 2.0
VBE(ON) VCE=4.0V, IC=3.0A
--
--
VBE(ON) VCE=4.0V, IC=6.0A (NPN types)
- 3.0
- 3.0
hFE VCE=4.0V, IC=2.0A
20 100
--
hFE VCE=4.0V, IC=2.5A
--
20 100
hFE VCE=4.0V, IC=3.0A
--
--
hFE VCE=4.0V, IC=6.0A
5.0 -
5.0 -
hfe VCE=4.0V, IC=0.5A, f=1.0kHz
25 -
25 -
fT
VCE=4.0V, IC=1.0A, f=1.0MHz (NPN types) 4.0 -
4.0 -
fT
VCE=4.0V, IC=1.0A, f=1.0MHz (PNP types) 5.0 -
5.0 -
2N5956
2N6374
MIN MAX
--
--
- 1.0
- 2.0
--
--
- 2.0
- 3.0
--
--
20 100
5.0 -
25 -
4.0 -
5.0 -
TO-66 CASE - MECHANICAL OUTLINE
UNITS
V
V
V
V
V
V
V
V
MHz
MHz
w w w. c e n t r a l s e m i . c o m
MARKING:
FULL PART NUMBER
R2 (2-September 2014)


Part Number 2N6372
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker Central Semiconductor Corp
PDF Download

2N6372 Datasheet PDF






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