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CMT04N60 Datasheet Preview

CMT04N60 Datasheet

Power MOSFET

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CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to ‹
withstand high energy in the avalanche mode and switch ‹
efficiently. This new high energy device also offers a ‹
drain-to-source diode with fast recovery time. Designed for ‹
high voltage, high speed switching applications such as ‹
power supplies, converters, power motor controls and ‹
bridge circuits.
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
D
TO-220/TO-220FP
TO-252
Front View
Front View
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current Continuous
Rating
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
4.0
14
±30
±40
83
30
-55 to 150
80
1.30
100
260
Unit
A
V
V
W
mJ
/W
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 1




Champion

CMT04N60 Datasheet Preview

CMT04N60 Datasheet

Power MOSFET

No Preview Available !

CMT04N60
POWER MOSFET
ORDERING INFORMATION
Part Number
Package
CMT04N60GN220*
TO-220
CMT04N60XN220*
TO-220
CMT04N60GN220FP*
TO-220 Full Package
CMT04N60XN220FP*
TO-220 Full Package
CMT04N60GN252*
TO-252
CMT04N60XN252*
TO-252
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen and Pb Free Product
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TJ = 25.)
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS =600 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = - 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) *
Forward Transconductance (VDS = 50 V, ID = 2.0 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 4.0 A,
VGS = 10 V,
RG = 9.1) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 480 V, ID = 4.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance (Measured from the source lead 0.25” from
package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 4.0 A,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width 300μs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
VSD
ton
trr
CMT04N60
Min
Typ
Max
600
Units
V
uA
1
100
nA
100
nA
2.0
4.0
V
2.2
2.5
mhos
540
760
pF
125
180
pF
8.0
20
pF
12
20
ns
7.0
10
ns
19
40
ns
10
20
ns
5.0
10
nC
2.7
nC
2.0
nC
4.5
nH
7.5
nH
1.5
V
**
ns
655
ns
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 2



Part Number CMT04N60
Description Power MOSFET
Maker Champion
Total Page 3 Pages
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