CMT04N60
CMT04N60 is Power MOSFET manufactured by Champion.
DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
TO-252
Front View
Front View
GATE DRAIN SOURCE
12 3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current － Continuous
Rating
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation TO-220 TO-220FP
Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 4A, L = 10m H, RG = 25Ω) Thermal Resistance － Junction to Case
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol ID IDM VGS
VGSM PD
TJ, TSTG EAS
θJC θJA TL
Value 4.0 14 ±30 ±40
83 30 -55 to 150 80
1.30 100 260
Unit A
℃ m J
℃/W
℃
2011/03/23 Rev. 1.5
Champion Microelectronic...
