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CMT20N15 Datasheet Preview

CMT20N15 Datasheet

Power MOSFET

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CMT20N15
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed to withstand high energy !
in avalanche and commutation modes. The new energy
!
efficient design also offers a drain-to-source diode with a !
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
!
PWM motor controls, these devices are particularly well
!
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
Front View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT20N15N220
Package
TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
Derate above 25
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 16A, L = 1.38mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
20
60
±20
±32
112
0.9
-55 to 150
177
1.1
62.5
260
Unit
A
V
V
W
W/
mJ
/W
2003/03/31 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 1




Champion

CMT20N15 Datasheet Preview

CMT20N15 Datasheet

Power MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 150 V, VGS = 0 V)
(VDS = 150 V, VGS = 0 V, TJ = 125)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 10.0 A)
Forward Transconductance (VDS = 50 V, ID = 10A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 75 V, ID = 20 A,
VGS = 10 V,
RG = 9.1) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 120 V, ID = 20 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 20 A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
CMT20N15
POWER MOSFET
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT20N15
Min
Typ
Max
150
25
100
100
100
2.0
4.0
0.13
2.8
4.2
1133
1627
332
474
105
174
11
25
77
153
33
67
49
97
39.1
55.9
7.5
22
4.5
7.5
Units
V
μA
nA
nA
V
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
1.5
V
ton
**
ns
trr
160
ns
2003/03/31 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 2



Part Number CMT20N15
Description Power MOSFET
Maker Champion
Total Page 3 Pages
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