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Chenmko Enterprise

2SC1766PT Datasheet Preview

2SC1766PT Datasheet

NPN Epitaxial Transistor

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CHENMKO ENTERPRISE CO.,LTD
SMALL FLAT
NPN Epitaxial Transistor
VOLTAGE 50 Volts CURRENT 2 Ampere
2SC1766PT
APPLICATION
* Power amplifier .
FEATURE
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.0 to 2.0W (mounted on ceramic substrCate).
* High saturation current capability.
CONSTRUCTION
* NPN Switching Transistor
MARKING
* hFE Classification P: 1766
Q: Q1766
Y: Y1766
CIRCUIT
4.6MAX.
1.7MAX.
SC-62/SOT-89
1.6MAX.
0.4+0.05
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
12
1 Base
3
2 Collector ( Heat Sink )
3 Emitter
123
BC E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Collector - Base Voltage
Open Emitter
Collector - Emitter Voltage
Open Base
Emitter - Base Voltage
Open Collector
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
TA 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PTOT
TSTG
TJ
TAMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
50
50
5
2
2
0.4
1000
+150
+150
+150
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
mW
oC
oC
oC
2003-8




Chenmko Enterprise

2SC1766PT Datasheet Preview

2SC1766PT Datasheet

NPN Epitaxial Transistor

No Preview Available !

www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( 2SC1766PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
CONDITION
Collector Cut-off Current
IE=0; VCB=50V
Emitter Cut-off Current
IC=0; VEB=5V
DC Current Gain
VCE=2V; Note 1
IC=0.5A; Note 2
IC=2.0A
Collector-Emitter Saturation Voltage
IC=1A; IB=0.05A
Base-Emitter Saturatio Voltage
Collector Capacitance
Transition Frequency
IC=1A; IB=0.05A
IE=ie=0; VCB=-10V;
f=1MHz
IC=-0.5A; VCE=2V;
f=100MHz
SYMBOL
ICBO
ICEO
hFE
VCEsat
VBEsat
CC
fT
SWITCHING TIMES ( Between 10% and 90% levels )
PARAMETERS
CONDITION
Turn-on Time
Storage Time
Fall Time
IB1
IB1
INPUT
IB2
20uSec
IB1=-IB2=0.05A
Duty cycle<1%
IB2
OUTPUT
30V
Note :
1. Pulse test: tp 300uSec; δ ≤ 0.02.
2. hFE(1) Classification P:82 to 180 Q: 120 to 270, Y: 180 to 390
SYMBOL
ton
ts
tf
MIN.
-
-
70
20
-
-
-
-
MIN.
-
-
-
TYPE
-
-
-
-
-
-
40
120
TYPE
0.1
1.0
0.1
MAX.
0.1
0.1
390
-
0.5
1.2
-
-
UNITS
uA
uA
Volts
mVolts
pF
MHz
MAX.
-
-
-
UNITS
uSec
uSec
uSec


Part Number 2SC1766PT
Description NPN Epitaxial Transistor
Maker Chenmko Enterprise
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