CEM8208 transistor equivalent, dual n-channel enhancement mode field effect transistor.
20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead f.
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