Datasheet Summary
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
20V , 6A , RDS(ON)=20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.
1 2 3 4
D1
D1
D2
D2
SO-8 1
S1
G1...