Click to expand full text
CEM8206
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 6A , RDS(ON)=20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.
1 2 3 4
5
D1
8
D1
7
D2
6
D2
5
SO-8 1
S1
G1 S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 Unit V V A A A W C
Ć12 Ć6 Ć24
6 2 -55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a RįJA 62.
CEM8206 Datasheet
