Click to expand full text
CEM8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. ESD Protected: 2000 V
D1 D1 D2 D2 8765
5
SO-8
1
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 7 IDM 25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.
CEM8208 Datasheet
