CEM8208 - Dual N-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
Download the CEM8208 datasheet PDF.
This datasheet also covers the CEM8208-Chino variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. ESD Protected: 2000 V
D1 D1 D2 D2 8765
5
SO-8
1
1234 S1 G1 S2 G2.
Note: The manufacturer provides a single datasheet file (CEM8208-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.
Datasheet Details
Part number
CEM8208
Manufacturer
Chino-Excel Technology
File Size
369.96 KB
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription for CEM8208 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CEM8208. For precise diagrams, and layout, please refer to the original PDF.
CEM8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super high dense cell design for...
View more extracted text
S = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. ESD Protected: 2000 V D1 D1 D2 D2 8765 5 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 7 IDM 25 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA
CEM8208 Datasheet
