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CES2308
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D PRELIMINARY
G
D G SOT-23 S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
5.4 22 1.25 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W
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CES2308 Datasheet
