CES2313 Description
P-Channel Enhancement Mode Field Effect Transistor.
CES2313 Key Features
- 30V, -3.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
CES2313 Datasheet
| Part number | CES2313 |
|---|---|
| Download | CES2313 Datasheet (PDF) |
| File Size | 411.61 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
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