CES2313A Overview
P-Channel Enhancement Mode Field Effect Transistor.
CES2313A Key Features
- 30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
CES2313A Datasheet Details
| Part number | CES2313A |
|---|---|
| Datasheet | CES2313A CES2313A_Chino Datasheet (PDF) |
| File Size | 434.50 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
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