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CES2313A - P-Channel MOSFET

Download the CES2313A datasheet PDF. This datasheet also covers the CES2313A_Chino variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2313A D D G SOT-23 G S S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CES2313A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CES2313A
Manufacturer Chino-Excel Technology
File Size 434.50 KB
Description P-Channel MOSFET
Datasheet download datasheet CES2313A Datasheet

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Other Datasheets by Chino-Excel Technology

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2313A D D G SOT-23 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -3.8 -15.2 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.DataSheet4U.com Details are subject to change without notice . 1 Rev 2. 2010.