CES2310
Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(O...
| Part | CES2310 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Chino-Excel Technology |
| Size | 359.65 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| CES2317 | CET | P-Channel MOSFET |