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ID7S625 - High Voltage High Side & Low Side Gate Driver

General Description

The ID7S625 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Key Features

  • Fully operational to +600 V.
  • 3.3 V /5 V/15 V logic compatible.
  • Floating channel designed for bootstrap operation.
  • Gate drive supply range from 10 V to 20 V.
  • UVLO for both channels.
  • 2.5A Output Current Capability.
  • Matched propagation delay for both channels Package/Order Information 9 NC 10 NC 11 VDD 12 HIN 13 SD 14 LIN 15 VSS 16 NC ID7S625 HO 8 VB 7 VS 6 NC 5 NC 4 VCC 3 COM 2 LO 1 Order code ID7S625SBC-R1 Package SOW16 Typical.

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Datasheet Details

Part number ID7S625
Manufacturer Chipown
File Size 395.29 KB
Description High Voltage High Side & Low Side Gate Driver
Datasheet download datasheet ID7S625 Datasheet

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Full PDF Text Transcription (Reference)

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ID7S625 Chipown High Voltage High Side & Low Side Gate Drive IC General description The ID7S625 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Application  DC/DC Converter  Power MOSFET or IGBT driver  DC/AC Converter Features  Fully operational to +600 V  3.