PN4HN60-DBI-T1 mosfet equivalent, n-channel superjunction mosfet.
* RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low.
Features
* RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
* Extremely high dv/dt capablity
* Very high comm.
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