PN4HN60-DAI-T1 Datasheet N-channel Superjunction MOSFET

Manufacturer: Chipown

Overview: PN4HN60 N-Channel Superjunction MOSFET 600V, 4.5A, 0.95Ω Chipown NeoFET®.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PN4HN60-DAI-T1
Manufacturer	Chipown
File Size	356.73 KB
Description	N-Channel Superjunction MOSFET
Datasheet	PN4HN60-DAI-T1 PN4HN60 Datasheet (PDF)

General Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance pared to that of a conventional MOSFET.

By bining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness.

Key Features

RDS(on) = 0.85Ω ( Typ. )@ VGS = 10V, ID = 2.8A.
Extremely high dv/dt capablity.
Very high commutation ruggedness.
Extremely low losses due to very low Rdson.
Qg.
Ultra low gate charge ( Typ. Qg = 15nC).
Low effective output capacitance.
100% avalanche tested.
JEDEC qualified, Pb-free plating.

More Datasheets from Chipown

Part Number	Description
PN4HN60-DBI-T1	N-Channel Superjunction MOSFET
PN4HN60	N-Channel Superjunction MOSFET

Datasheet Details

General Description

Key Features

More Datasheets from Chipown

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