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PN4HN60 Datasheet N-channel Superjunction MOSFET

Manufacturer: Chipown

Overview: PN4HN60 N-Channel Superjunction MOSFET 600V, 4.5A, 0.95Ω Chipown NeoFET®.

Datasheet Details

Part number PN4HN60
Manufacturer Chipown
File Size 356.73 KB
Description N-Channel Superjunction MOSFET
Datasheet PN4HN60-Chipown.pdf

General Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance pared to that of a conventional MOSFET.

By bining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness.

Key Features

  • RDS(on) = 0.85Ω ( Typ. )@ VGS = 10V, ID = 2.8A.
  • Extremely high dv/dt capablity.
  • Very high commutation ruggedness.
  • Extremely low losses due to very low Rdson.
  • Qg.
  • Ultra low gate charge ( Typ. Qg = 15nC).
  • Low effective output capacitance.
  • 100% avalanche tested.
  • JEDEC qualified, Pb-free plating.

More Datasheets from Chipown

Part Number Description
PN4HN60-DAI-T1 N-Channel Superjunction MOSFET
PN4HN60-DBI-T1 N-Channel Superjunction MOSFET

PN4HN60 Distributor