PN4HN60-DBI-T1 Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance pared to that of a conventional MOSFET. By bining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior...
PN4HN60-DBI-T1 Key Features
- RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
- Extremely high dv/dt capablity
- Very high mutation ruggedness
- Extremely low losses due to very low Rdson-Qg
- Ultra low gate charge ( Typ. Qg = 15nC)
- Low effective output capacitance
- 100% avalanche tested
- JEDEC qualified, Pb-free plating