PN4HN60-DBI-T1 Overview
Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET.
Key Features
- RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
- Extremely high dv/dt capablity
- Very high commutation ruggedness
- Extremely low losses due to very low Rdson*Qg
- Ultra low gate charge ( Typ. Qg = 15nC)
