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CSD16321Q5 - Power MOSFETs

Features

  • Optimized for 5V gate drive.
  • Ultra Low Qg & Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant CICLON NexFET™ Power MOSFETs Product Summary VDS 25 14 2.5 VGS = 3.0V RDS(on) Vth VGS = 4.5V VGS = 8.0V 1.1 2.8 2.1 1.9 V nC nC m m m V G S S S D D D D S 1 S 2 S 3 G 4 D 8 D 7 D 6 D 5 D Qg Qgd QFN 5mm x 6mm Plastic Package Top View Maximum Values (TA = 25oC unless otherwise stated) Symbol VDS VGS ID Drain to Source Voltage.

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Datasheet preview – CSD16321Q5

Datasheet Details

Part number CSD16321Q5
Manufacturer Ciclon
File Size 453.43 KB
Description Power MOSFETs
Datasheet download datasheet CSD16321Q5 Datasheet
Additional preview pages of the CSD16321Q5 datasheet.

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Full PDF Text Transcription

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N-Channel www.DataSheet4U.com CSD16321Q5 Features  Optimized for 5V gate drive  Ultra Low Qg & Qgd  Low Thermal Resistance  Avalanche Rated  Pb Free Terminal Plating  RoHS Compliant CICLON NexFET™ Power MOSFETs Product Summary VDS 25 14 2.5 VGS = 3.0V RDS(on) Vth VGS = 4.5V VGS = 8.0V 1.1 2.8 2.1 1.9 V nC nC m m m V G S S S D D D D S 1 S 2 S 3 G 4 D 8 D 7 D 6 D 5 D Qg Qgd QFN 5mm x 6mm Plastic Package Top View Maximum Values (TA = 25oC unless otherwise stated) Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM PD TJ, TSTG EAS 1. 2. Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =66A, L = 0.
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