Datasheet4U Logo Datasheet4U.com

CPC5603 - N-Channel MOSFET

General Description

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • 415V Drain-to-Source Voltage.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 8 (Typical) @ 25°C.
  • Low VGS(off) Voltage: -2.0V to -3.6V.
  • High Input Impedance.
  • Low Input and Output Leakage.
  • Small Package Size SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.

📥 Download Datasheet

Datasheet Details

Part number CPC5603
Manufacturer Clare
File Size 108.43 KB
Description N-Channel MOSFET
Datasheet download datasheet CPC5603 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 14 2.5 Units V  W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage: -2.0V to -3.