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IXYS

CPC5602C Datasheet Preview

CPC5602C Datasheet

N-Channel FET

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INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - VDS
Max On-Resistance - RDS(on)
Max Power
Rating
350
14
2.5
Units
V
W
Features
350V Drain-to-Source Voltage
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
Low On-resistance: 8(Typical) @ 25°C
Low VGS(off) Voltage: -2.0V to -3.6V
High Input Impedance
Low Input and Output Leakage
Small Package Size SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
Applications
Support Component for LITELINK™
Data Access Arrangement (DAA)
Telecommunications
Normally On Switches
Ignition Modules
Converters
Security
Power Supplies
CPC5602
N-Channel Depletion Mode FET
Description
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. The vertical
DMOS process yields a highly reliable device,
particularly in difficult application environments such
as telecommunications, security, and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8, a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part #
CPC5602CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC5602-R10
www.ixysic.com
1




IXYS

CPC5602C Datasheet Preview

CPC5602C Datasheet

N-Channel FET

No Preview Available !

INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Symbol Ratings Units
Drain-to-Source Voltage
VDS
350
V
Gate-to-Source Voltage
VGS
±20
V
Total Package Dissipation
P
2.5
W
Operational Temperature
Storage Temperature
TA
-40 to +85 oC
TA
-40 to +125 oC
CPC5602
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @25oC (Unless Otherwise Specified)
Parameter
Symbol
Conditions
Min Typ Max Units
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On-Resistance
Gate Leakage Current
Gate Capacitance
VGS(off)
IDS(off)
ID
RDS(on)
IGSS
CISS
ID= 2µA, VDS=10V, VDS=100V
VGS= -5V, VDS=190V
VGS= -5V, VDS=350V
VGS= -2.7V, VDS=5V, VDS=50V
VGS= -0.57V, VDS=5V
VGS= -0.35V, IDS=50mA
VGS=10V, VGS=-10V
VDS= VGS=0V
-2
-2.62 -3.6
V
-
-
20
nA
-
-
1
A
-
-
5
mA
130
-
-
mA
-
8
14
-
-
0.1
A
-
-
300
pF
Thermal Characteristics
Parameter
Thermal Resistance
Symbol
RJC
Conditions
-
Min Typ Max Units
-
-
14
ºC/W
2
www.ixysic.com
R10


Part Number CPC5602C
Description N-Channel FET
Maker IXYS
PDF Download

CPC5602C Datasheet PDF






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