INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - VDS
Max On-Resistance - RDS(on)
Max Power
Rating
350
14
2.5
Units
V
W
Features
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• Low On-resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
CPC5602
N-Channel Depletion Mode FET
Description
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. The vertical
DMOS process yields a highly reliable device,
particularly in difficult application environments such
as telecommunications, security, and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8, a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part #
CPC5602CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC5602-R10
www.ixysic.com
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