CPC5603CTR - N-Channel FET

This page provides the datasheet information for the CPC5603CTR, a member of the CPC5603 N-Channel FET family.

Product Overview

IXYS

Datasheet Details

Part number	CPC5603CTR
Manufacturer	IXYS
File Size	110.49 KB
Description	N-Channel FET
Datasheet	CPC5603CTR Datasheet
Additional preview pages of the CPC5603CTR datasheet.

CPC5603CTR Product details

Description

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

415V Drain-to-Source Voltage.
Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
Low On-Resistance: 8 (Typical) @ 25°C.
Low VGS(off) Voltage: -2.0V to -3.6V.
High Input Impedance.
Low Input and Output Leakage.
Small Package Size SOT-223.
PC Card (PCMCIA) Compatible.
PCB Space and Cost Savings.

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Other Datasheets by IXYS

CPC5603C - N-Channel FET
CPC5603 - N-Channel FET
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CPC5602CTR - N-Channel FET

Published: Jan 13, 2021 |